ST2301A |
Part Number | ST2301A |
Manufacturer | Stanson Technology |
Description | ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other . |
Features |
Part Marking S01YA
※ Process Code ∶ A ~ Z ; a ~ z ※ ST2301SRG ∶ S : SOT23 R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A 2005. V1 P Channel Enhancement Mode MOSFET ST2301A -3.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient www.DataSheet. |
Datasheet |
ST2301A Data Sheet
PDF 250.52KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | ST2301 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
2 | ST2300 |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
3 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
4 | ST2302 |
Stanson Technology |
N Channel Enchancement Mode MOSFET | |
5 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
6 | ST2303SRG |
Stanson Technology |
P-Channel Enhancement Mode MOSFET | |
7 | ST2304 |
Stanson Technology |
N Channel Enchancement Mode MOSFET | |
8 | ST2304SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
9 | ST2305 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
10 | ST2305A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |