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Stanson Technology |
MOSFET � 30V/12A, RDS(ON) = 13mΩ (Typ.) @VGS = 10V � 30V/10A, RDS(ON) = 18mΩ @VGS = 4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 STN |
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Stanson Technology |
MOSFET � 30V/8.5A, RDS(ON) = 16mΩ (Typ.) @VGS = 10V � 30V/6.6A, RDS(ON) = 26mΩ @VGS = 4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 Y |
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STANSON |
N-Channel Enhancement Mode MOSFET � 60V/7.2A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V � 60V/6.8A, RDS(ON) = 32mΩ @VGS = 4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING Y: Year |
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Stanson Technology |
MOSFET 80V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA |
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Stanson Technology |
MOSFET ◆ 30V/6.0A, RDS(ON)=40mΩ@VGS=10V ◆ 30V/5.0A, RDS(ON)=50mΩ@VGS=4.5V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6P package design Y: Year Code W: Week Code ORDERING |
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Stanson Technology |
MOSFET TO-252 TO-251 30V/ 15.0A, RDS(ON) = 32mΩ @VGS = 10V 30V/8.0A, RDS(ON) =40mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PART MARKING |
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Stanson Technology |
MOSFET z 30V/6.8A, RDS(ON) = 28mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 36mΩ @VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 STN4412 |
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Stanson Technology |
MOSFET z 30V/6.8A, RDS(ON) = 28mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 36mΩ @VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 STN4412 |
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Stanson Technology |
MOSFET � 20V/8.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 4.5V � 20V/7.0A, RDS(ON) = 36mΩ @VGS = 2.5V � 20V/3.0A, RDS(ON) = 42mΩ @VGS = 1.8V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP |
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Stanson Technology |
MOSFET � 40V/10.0A, RDS(ON) = 20mΩ (Typ.) @VGS = 10V � 40V/8.0A, RDS(ON) = 23mΩ @VGS = 4.5V � 40V/6.0A, RDS(ON) = 27mΩ @VGS = 2.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP |
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Stanson Technology |
MOSFET z 30V/7.2A, RDS(ON) = 28mΩ@VGS = 10V z 30V/6.0A, RDS(ON) = 36mΩ@VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 ORDERING I |
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Stanson Technology |
MOSFET z 30V/7.2A, RDS(ON) = 28mΩ@VGS = 10V z 30V/6.0A, RDS(ON) = 36mΩ@VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 ORDERING I |
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Stanson |
Dual N Channel Enhancement Mode MOSFET z 20V/6.0A, R =DS(ON) 30m-ohm@VGS =4.5V z 20V/5.0A, RDS(ON) =42m-ohm@VGS =2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional low on-resistance and maximum DC current capability z TSSOP-8 package design 1 23 4 D1 S1 S1 G1 S |
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STANSON |
Dual N-Channel Enhancement Mode MOSFET l 20V/5.0A, RDS(ON) = 21m-ohm (Typ.) @VGS =4.5V l 20V/3.0A, RDS(ON) =27m-ohm @VGS =2.5V l Super high density cell design for extremely low RDS(ON) l Exceptional low on-resistance and maximum DC current capability l TSSOP-8 package design D1 S1 S1 G1 |
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STANSON |
N-Channel Enhancement Mode MOSFET l 30V/20A, RDS(ON) = 3mΩ @VGS = 10V l 30V/20A, RDS(ON) = 4mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design PART MARKING Y Year Cod |
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STANSON |
N-Channel Enhancement Mode MOSFET l 40V/25A, RDS(ON) = 2.2mΩ @VGS = 10V l 40V/12A, RDS(ON) = 2.6mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PPAK5x6 package design S S SG Y：Year Code A：Date |
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Stanson |
Dual N-Channel Enhancement Mode MOSFET 60V/ 8.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/6.0A, RDS(ON) = 40mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design MARKING Y: Year Code A: Pordu |
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Stanson |
N-Channel Enhancement Mode MOSFET l 60V/8.2A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V l 60V/7.6A, RDS(ON) = 30mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING Y: Year |
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Stanson Technology |
MOSFET 20V/8.0A, RDS(ON) = 20m-ohm (Typ.) @VGS =4.5V 20V/7.0A, RDS(ON) =24m-ohm @VGS =2.5V 20V/3.0A, RDS(ON) =32m-ohm @VGS =1.8V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSSOP-8 |
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Stanson Technology |
MOSFET 20V/6.0A, RDS(ON) = 25m-ohm @VGS =4.5V 20V/5.0A, RDS(ON) =42m-ohm @VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSOP-6 package design F：Year Code A: Produces Code |
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Desde 2024. D4U Semiconductor.
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