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STN8822 |
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| Part Number | STN8822 |
| Manufacturer | Stanson Technology |
| Description | STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
ted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
20 +/-12
V V
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
ID
IDM IS
PD TJ TSTG RθJA
7.4
6.0 30 1.5 2.0
1.2 -40/140 -55/150
105
A
A A
W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STN8822 2009. V1
STN8822
Dual N Channel Enhancement Mod... |
| Document |
 STN8822 Data Sheet
PDF 607.36KB |
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