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STN4920S8TG |
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| Part Number | STN4920S8TG |
| Manufacturer | Stanson Technology |
| Description | STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applicat... |
| Features |
annel Enhancement Mode MOSFET
7.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
30
±20 7.2 6.0 20
1.7 2.8 1.8 -55/150
-55/150
65
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA... |
| Document |
 STN4920S8TG Data Sheet
PDF 478.31KB |
Similar Datasheet
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| 2 | STN4920 |
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| 5 | STN4972S8RG |
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Desde 2024. D4U Semiconductor.
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