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STN4822 |
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| Part Number | STN4822 |
| Manufacturer | Stanson Technology |
| Description | STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applicat... |
| Features |
ed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
30
±20 8.5 6.6 30
3.0 2.0 1.28 -55/150
-55/150
48
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4822 2009. V1
STN4822
Dual N Channel Enhancement Mode MOSFET
8.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
... |
| Document |
 STN4822 Data Sheet
PDF 510.05KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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