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STN4826 |
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| Part Number | STN4826 |
| Manufacturer | Stanson |
| Description | The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored... |
| Features |
noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
60
±20 8.0 6.0 20
2.0 2.0 1.3 -55/150
-55/150
75
Unit V V A A A W ℃ ℃ ℃/W
2
120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4826 2013. V1
STN4826
Dual N Channel Enhanceme... |
| Document |
 STN4826 Data Sheet
PDF 673.36KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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