| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Power Transistor case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 1.25 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Sym |
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Siemens Semiconductor Group |
16 Kbit 2048 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus/ Page Protection Mode • Data EEPROM internally organized as 2048 bytes and 128 pages × 16 bytes • Page protection mode, flexible page-by-page hardware write protection – Additional protection EEPROM of 128 bits, 1 bit per data page P-DIP-8-4 – Protection setting for each |
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Siemens Semiconductor Group |
Power Transistor 07/96 BUZ 100 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.013 4 1 100 100 100 V VGS = 0 V, ID |
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Siemens Semiconductor Group |
Power Transistor IN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 1.5 ≤ 75 E 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdo |
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Siemens Semiconductor Group |
Power Transistor |
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Siemens Semiconductor Group |
IGBT chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 3.1 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage |
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Siemens Semiconductor Group |
Power Transistor tegory, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 0.6 ≤ 75 E 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- sourc |
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Siemens Semiconductor Group |
Power Transistor istance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.88 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise spec |
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Siemens Semiconductor Group |
Power Transistor 6 BUZ 102 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.017 4 1 100 100 100 V VGS = 0 V, ID, Tj |
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Siemens Semiconductor Group |
Power Transistor istance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 1.25 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise spec |
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Siemens Semiconductor Group |
Power Transistor 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 3 0.1 10 10 0.03 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, |
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Siemens Semiconductor Group |
Power Transistor )DSS -50 -3 -0.1 -10 -10 0.25 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 |
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Siemens Semiconductor Group |
Power Transistor Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 3 0.1 10 10 0.17 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current |
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Siemens Semiconductor Group |
Power Transistor |
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Siemens Semiconductor Group |
IGBT ≤1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.3 mA Col |
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Siemens Semiconductor Group |
IGBT JC ≤ 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 m |
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Siemens Semiconductor Group |
IGBT - RthJC ≤ 0.4 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC |
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Siemens Semiconductor Group |
Power Transistor case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.88 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Sym |
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Siemens Semiconductor Group |
Power Transistor , junction - ambient IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 2.7 ≤ 62 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. S |
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Siemens Semiconductor Group |
Power Transistor ance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 2.7 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specifie |
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Desde 2024. D4U Semiconductor.
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