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BUZ101L |
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| Part Number | BUZ101L |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUZ 101L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1... |
| Features |
IN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 1.5 ≤ 75 E 55 / 175 / 56 K/W Unit °C
Tj Tstg RthJC RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 1.6 0.1 1 10 10 0.045 2 1 100 100 100
V
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA µA nA Ω 0.06
VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-so... |
| Document |
 BUZ101L Data Sheet
PDF 185.34KB |
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