Busque con el número de pieza junto con el fabricante o la descripción
BUP213 |
Click to view a larger image
| Part Number | BUP213 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 213 Maximum Ratings Parameter Collector-emitter v... |
| Features |
JC
≤ 0.63
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 -
V
VGE = VCE, IC = 0.35 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.8
mA nA 100
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
AC Chara... |
| Document |
 BUP213 Data Sheet
PDF 110.33KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|