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BUP22 |
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| Part Number | BUP22 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching- regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES VCEO VEBO I. |
| Features | AL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.67A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 6A; IB= 0.67A VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ VEB= 9V; IC=0 1.5 V 1.5 V 1 2 mA 10 mA hFE DC Current Gain IC= 1A; VCE= 5V 25 Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time IC= 6A; IB1=. |
| Datasheet |
 BUP22 Data Sheet
PDF 207.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUP200 |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BUP200D |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BUP202 |
Siemens Semiconductor Group |
IGBT |
|
| 4 | BUP203 |
Siemens Semiconductor Group |
IGBT |
|
| 5 | BUP212 |
Infineon Technologies AG |
IGBT |
|
| 6 | BUP213 |
Siemens Semiconductor Group |
IGBT |
|
| 7 | BUP22A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | BUP22B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | BUP22BF |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | BUP22C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
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