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BUP307 |
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| Part Number | BUP307 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Pin 2 C Pin 3 E Type BUP 307 Maximum Ratings Parameter ... |
| Features |
-
RthJC
≤ 0.4
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5
V
VGE = VCE, IC = 0.1 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 15 A, Tj = 150 °C
Zero gate voltage collector current
ICES
250 1000
µA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1000 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
100
nA
VGE = 20 V, VC... |
| Document |
 BUP307 Data Sheet
PDF 343.39KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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