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BUZ20 |
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| Part Number | BUZ20 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUZ 20 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 20 VDS 100 V ID 13.5 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C6707... |
| Features |
Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 3 0.1 10 10 0.17 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.2
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 8.5 A
Semiconductor Group
2
07/96
BUZ 20
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. ... |
| Document |
 BUZ20 Data Sheet
PDF 202.62KB |
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