Samsung semiconductor K4S Hoja de datos

No.	parte #	Fabricante	Descripción
1	K4S280432C	Samsung semiconductor	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave) • All inputs are
2	K4S281632D-NC75	Samsung semiconductor	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
3	K4S510832M	Samsung semiconductor	16M x 8bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
4	K4S280432A	Samsung semiconductor	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 Page ) -. Burst type (Sequential & Interleave) All inputs a
5	K4S280432M	Samsung semiconductor	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 page) -. Burst type (Sequential & Interleave) • All inputs
6	K4S280832A	Samsung semiconductor	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in
7	K4S281632B-TC10	Samsung semiconductor	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in
8	K4S641632C	Samsung semiconductor	1M x 16Bit x 4 Banks Synchronous DRAM • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in
9	K4S510732B	Samsung semiconductor	Stacked 512Mbit SDRAM • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
10	K4S640432H-UCL75	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
11	K4S641632H-UCL70	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
12	K4S511533F-YF	Samsung semiconductor	8M x 16Bit x 4 Banks Mobile SDRAM • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • E
13	K4S561632J	Samsung semiconductor	256Mb J-die SDRAM Specification ....................................................................................................................................... 4 2.0 General Description ........................................................................................
14	K4S280432F-UC75	Samsung semiconductor	128Mb F-die SDRAM • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
15	K4S281632C-TI75	Samsung semiconductor	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
16	K4S281632D-L55	Samsung semiconductor	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
17	K4S281632D-L75	Samsung semiconductor	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
18	K4S281632D-TC75	Samsung semiconductor	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
19	K4S281632M-TC1L	Samsung semiconductor	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
20	K4S28323LF	Samsung semiconductor	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cyc