K4S641632C Samsung semiconductor DRAM, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

K4S641632C

Click to view a larger image

Part Number	K4S641632C
Manufacturer	Samsung semiconductor
Description	The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design all...
Features	• • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high...
Document	K4S641632C Data Sheet PDF 1.14MB

No.	Parte #	Fabricante	Descripción
1	K4S641632D	Samsung semiconductor	64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
2	K4S641632E	Samsung semiconductor	64Mbit SDRAM
3	K4S641632F	Samsung semiconductor	64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
4	K4S641632H	Samsung Electronics	64Mb H-die SDRAM
5	K4S641632H-L60	Samsung semiconductor	64Mb H-die SDRAM Specification
6	K4S641632H-L70	Samsung semiconductor	64Mb H-die SDRAM Specification