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K4S280432F-UC75 |
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| Part Number | K4S280432F-UC75 |
| Manufacturer | Samsung semiconductor |
| Description | The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by ... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K Cycle) • 54 TSOP(II) Pb-free Package • RoHS compliant GENERAL DESCRIPTION The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high d... |
| Document |
 K4S280432F-UC75 Data Sheet
PDF 174.13KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4S280432F-UL75 |
Samsung semiconductor |
128Mb F-die SDRAM |
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| 2 | K4S280432F-TC75 |
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128Mb F-die SDRAM Specification |
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| 3 | K4S280432F-TL75 |
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128Mb F-die SDRAM Specification |
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| 4 | K4S280432F |
Samsung semiconductor |
128Mb F-die SDRAM Specification |
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| 5 | K4S280432A |
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128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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| 6 | K4S280432B |
Samsung semiconductor |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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Desde 2024. D4U Semiconductor.
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