K4S510732B Samsung semiconductor SDRAM, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

K4S510732B

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Part Number	K4S510732B
Manufacturer	Samsung semiconductor
Description	The K4S510732B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design al...
Features	• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (8K Cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S510732B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SA...
Document	K4S510732B Data Sheet PDF 94.25KB

No.	Parte #	Fabricante	Descripción
1	K4S510432B-TC	Samsung semiconductor	512Mb B-die SDRAM Specification
2	K4S510432B-TC75	Samsung semiconductor	512Mb B-die SDRAM Specification
3	K4S510432B-TCL75	Samsung semiconductor	512Mb B-die SDRAM Specification
4	K4S510432D	Samsung	512Mb D-die SDRAM
5	K4S510432M	Samsung semiconductor	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
6	K4S510832B-TC75	Samsung semiconductor	512Mb B-die SDRAM Specification