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K4S280432C |
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| Part Number | K4S280432C |
| Manufacturer | Samsung semiconductor |
| Description | The K4S280432C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design all... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K Cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S280432C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s hig... |
| Document |
 K4S280432C Data Sheet
PDF 112.59KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4S280432A |
Samsung semiconductor |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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| 2 | K4S280432B |
Samsung semiconductor |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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| 3 | K4S280432D |
Samsung semiconductor |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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| 4 | K4S280432E |
Samsung semiconductor |
128Mb E-die SDRAM Specification |
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| 5 | K4S280432E-TC75 |
Samsung semiconductor |
128Mb E-die SDRAM Specification |
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| 6 | K4S280432E-TL75 |
Samsung semiconductor |
128Mb E-die SDRAM Specification |
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Desde 2024. D4U Semiconductor.
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