No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Samsung semiconductor |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave) • All inputs are |
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Samsung semiconductor |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung semiconductor |
16M x 8bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung |
512Mb D-die SDRAM |
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Samsung semiconductor |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 Page ) -. Burst type (Sequential & Interleave) All inputs a |
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Samsung semiconductor |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 page) -. Burst type (Sequential & Interleave) • All inputs |
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Samsung semiconductor |
256Mb J-die SDRAM Specification ....................................................................................................................................... 4 2.0 General Description ........................................................................................ |
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Samsung |
SDRAM 256Mb E-die • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung semiconductor |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in |
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Samsung semiconductor |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Synchronous DRAM • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in |
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Samsung semiconductor |
Stacked 512Mbit SDRAM • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung semiconductor |
8M x 16Bit x 4 Banks Mobile SDRAM • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • E |
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Samsung semiconductor |
128Mb F-die SDRAM • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung |
512Mb D-die SDRAM |
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Samsung semiconductor |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung semiconductor |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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Samsung semiconductor |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All |
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