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STMicroelectronics |
high-speed HB2 series IGBT • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applica |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fas |
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STMicroelectronics |
IGBT • Low on-voltage drop (VCE(sat)) • Very soft UltraFAST recovery anti-parallel diode Applications • High frequency motor drives • SMPS and PFC in both hard switch and resonant topologies Description This device uses the advanced PowerMESH process resu |
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STMicroelectronics |
30A high speed HB series IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffi |
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STMicroelectronics |
IGBT • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applica |
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STMicroelectronics |
IGBT 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 75 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Descri |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffic |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffic |
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STMicroelectronics |
IGBT TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 80 A • Tight parameter distribution • Safe paralleling • Low therma |
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STMicroelectronics |
IGBT C(2, TAB) • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) tem |
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STMicroelectronics |
Automotive-grade trench gate field-stop IGBT TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A • Co-packed with high ruggedness rectifier diode • Minimized tail current • Tight param |
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STMicroelectronics |
short circuit rugged IGBT ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes t |
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STMicroelectronics |
short circuit rugged IGBT ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes t |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 50 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance |
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STMicroelectronics |
soft-switching IH series IGBT • Designed for soft commutation only • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.5 V (typ.) @ IC = 40 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Low drop voltage freewheeling co-packaged diode |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1 |
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STMicroelectronics |
1200V short circuit rugged IGBT ■ ■ ■ ■ ■ Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling diode 1 2 3 Applications ■ TO-247 Motor control Description This high voltage and short-circuit rugg |
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STMicroelectronics |
Trench gate field-stop IGBT • 10 µs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 40 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • We |
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STMicroelectronics |
Trench gate field-stop IGBT 6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 50 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS P |
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Desde 2024. D4U Semiconductor.
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