STGWA50M65DF2 |
Part Number | STGWA50M65DF2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system per... |
Features |
• Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 50 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode Applications • Motor control • UPS • PFC • General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency w... |
Document |
STGWA50M65DF2 Data Sheet
PDF 315.74KB |
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