STGWA50M65DF2 STMicroelectronics IGBT Datasheet. existencias, precio

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STGWA50M65DF2

STMicroelectronics
STGWA50M65DF2
STGWA50M65DF2 STGWA50M65DF2
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Part Number STGWA50M65DF2
Manufacturer STMicroelectronics (https://www.st.com/)
Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system per...
Features
• Maximum junction temperature: TJ = 175 °C
• 6 μs of minimum short-circuit withstand time
• VCE(sat) = 1.65 V (typ.) @ IC = 50 A
• Tight parameter distribution
• Safer paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft- and fast-recovery antiparallel diode Applications
• Motor control
• UPS
• PFC
• General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency w...

Document Datasheet STGWA50M65DF2 Data Sheet
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