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GWA75H65DRFB2AG |
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| Part Number | GWA75H65DRFB2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for har... |
| Features |
TO-247 long leads C(2, TAB)
G(1)
E(3)
NG1E3C2T
• AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A • Co-packed with high ruggedness rectifier diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • DC/DC converter for EV/HEV • On board charger (OBC) Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and swit... |
| Document |
 GWA75H65DRFB2AG Data Sheet
PDF 640.40KB |
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Desde 2024. D4U Semiconductor.
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