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STGWA25H120DF2 |
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| Part Number | STGWA25H120DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction a... |
| Features |
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fast recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compro... |
| Document |
 STGWA25H120DF2 Data Sheet
PDF 474.85KB |
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Desde 2024. D4U Semiconductor.
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