Busque con el número de pieza junto con el fabricante o la descripción
STGWA50HP65FB2 |
Click to view a larger image
| Part Number | STGWA50HP65FB2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of cond... |
| Features |
• Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • Welding • Power factor correction Description E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of red... |
| Document |
 STGWA50HP65FB2 Data Sheet
PDF 537.85KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STGWA50IH65DF |
STMicroelectronics |
Trench gate field-stop IGBT |
|
| 2 | STGWA50M65DF2 |
STMicroelectronics |
IGBT |
|
| 3 | STGWA50M65DF2AG |
STMicroelectronics |
Automotive-grade IGBT |
|
| 4 | STGWA100H65DFB2 |
STMicroelectronics |
IGBT |
|
| 5 | STGWA15H120DF2 |
STMicroelectronics |
IGBT |
|
| 6 | STGWA15M120DF3 |
STMicroelectronics |
Trench gate field-stop IGBT |
|
Desde 2024. D4U Semiconductor.
|