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ST Microelectronics |
STW10NK807 OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product USING TWO CHIP ENABLE INPUTS LOW VCC DATA RETENTION: 2V 1/36 s March 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. M36W108AT, M36W108AB Figure 2. LB |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1 Industry’s lowest RDS(on) Industry’s best figure |
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ST Microelectronics |
N-channel Power MOSFET Type VDSS @TjMax RDS(on) ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V <0.75Ω 10A 115W STP10NK60Z 650V <0.75Ω 10A 115W STP10NK60ZFP 650V <0.75Ω 10A 35W STW10NK60Z 650V <0.75Ω 10A 156W ■ Extremely high dv/dt capability ■ 100% Aval |
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ST Microelectronics |
STW10NK80Z TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) ID <0.90Ω 9A <0.90Ω 9A <0.90Ω 9A Pw 160 W 40 W 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Ve |
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ST Microelectronics |
N-CHANNEL Power MOSFET TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) <0.90Ω <0.90Ω <0.90Ω ID 9A 9A 9A Pw 160 W 40 W 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ |
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ST Microelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-channel Power MOSFET 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram ' 7$% * 6 AM01476v1 Order codes VDS RDS(on) max ID PTOT STB10N95K5 STF10N95K5 950 V STP10N95K5 STW10N95K5 0.8 Ω 130 W 30 W 8A 130 W • W |
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STMicroelectronics |
IGBT 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Descri |
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STMicroelectronics |
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e |
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STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET |
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ST Microelectronics |
8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product USING TWO CHIP ENABLE INPUTS LOW VCC DATA RETENTION: 2V 1/35 s May 1999 This is information on a product still in production but not recommended for new designs. M36W108T, M36W108B Figure 2. LBGA and LGA Connections (Top View) 1 2 3 4 5 6 A W A |
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ST Microelectronics |
8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product USING TWO CHIP ENABLE INPUTS LOW VCC DATA RETENTION: 2V 1/36 s March 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. M36W108AT, M36W108AB Figure 2. LB |
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ST Microelectronics |
8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product USING TWO CHIP ENABLE INPUTS LOW VCC DATA RETENTION: 2V 1/35 s May 1999 This is information on a product still in production but not recommended for new designs. M36W108T, M36W108B Figure 2. LBGA and LGA Connections (Top View) 1 2 3 4 5 6 A W A |
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ST Microelectronics |
8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product USING TWO CHIP ENABLE INPUTS LOW VCC DATA RETENTION: 2V 1/35 s May 1999 This is information on a product still in production but not recommended for new designs. M36W108T, M36W108B Figure 2. LBGA and LGA Connections (Top View) 1 2 3 4 5 6 A W A |
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ST Microelectronics |
N-CHANNEL Power MOSFET source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperat |
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ST Microelectronics |
N-CHANNEL Power MOSFET Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Dio |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TW/STH10NA50 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Curren |
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ST Microelectronics |
STW10NC60 (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage ( |
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STMicroelectronics |
N-channel Power MOSFET Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z s s s s s s Package RDS(on) <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω ID 10 A 10 A 10 A 10 A 10 A Pw 115 115 35 115 156 VDSS 600 600 600 600 600 V V V V V 3 1 2 1 2 3 3 2 1 TO-220 TO |
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Desde 2024. D4U Semiconductor.
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