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STW10NA50 |
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| Part Number | STW10NA50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
TW/STH10NA50 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH10NA50FI V V V 5.6 3.5 38 60 0.48 4000 A A A W W/o C V o o 500 500 ± 30 9.6 6.1 38 150 1.2 -65 to 150 150 C C ( •) Pulse width limited by safe operating area November 1996 1/11 STH1... |
| Document |
 STW10NA50 Data Sheet
PDF 243.05KB |
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