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STW10NB60 |
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| Part Number | STW10NB60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o o
Value 600 600 ± 30 10 6.2 40 160 1.28 4.5 -65 to 150 150
( 1) ISD ≤ 10A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/8
( •) Pulse width limited by safe operating area October 1998 STW10NB60 THERMAL DATA R thj -case... |
| Document |
 STW10NB60 Data Sheet
PDF 93.94KB |
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