STW10NC70Z |
Part Number | STW10NC70Z |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar... |
Features |
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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STW10NC70Z
Safe Operating Area Thermal Impedance
Output Characteristics
Transfer Characteristics
Transcon... |
Document |
STW10NC70Z Data Sheet
PDF 249.26KB |
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