W10NC60 |
Part Number | W10NC60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
Features |
(RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 10 6.3 40 160 1.28
Value STW10NC60 600 600 ±30 10 (*) 6.3 (*) 40 (*) 60 0.48 3.5 2500 – 55 to 150 (1)ISD ≤ 10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by Maximum Temperature Allowed Unit V V V A A A W W/°C V/ns V °C STH10NC60FI ( •)Pulse width limited by safe opera... |
Document |
W10NC60 Data Sheet
PDF 259.66KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | W10NC70Z |
ST Microelectronics |
STW10NC70Z | |
2 | W10NK60Z |
STMicroelectronics |
N-channel Power MOSFET | |
3 | W10NK807 |
ST Microelectronics |
STW10NK807 | |
4 | W10NK80Z |
ST Microelectronics |
STW10NK80Z | |
5 | W10 |
Semitel |
Glass Passivated Single-Phase Bridge Rectifiers | |
6 | W10 |
GULF SEMI |
SINGLE PHASE SILICON BRIDGE RECTIFIER |