| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Type VDSS RDS(on) RDS(on)*Qg STB11NM80 800V < 0.40Ω 14Ω*nC STF11NM80 800V < 0.40Ω 14Ω*nC STP11NM80 800V < 0.40Ω 14Ω*nC STW11NM80 800V < 0.40Ω 14Ω*nC ID 11A 11A 11A 11A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best |
|
|
|
|
ST Microelectronics |
N-CHANNEL Power MOSFET Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 1 3 100% avalanch |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 VDSS @ RDS(on) TJmax max ID 710 V < 0.48 Ω 9 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET www.DataSheet4U.com Type VDSS (@TJ=TJmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 ■ ■ ■ ■ 11A 11A 11A 11A TO-220 1 2 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET Order code VDS RDS(on) max. ID STD11N65M2 STP11N65M2 650 V 0.68 Ω 7A STU11N65M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 85 W Package DPAK TO-220 IPAK Appli |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. STF11N65M2 650 V 0.68 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 7A PTOT 25 W D(2) G(1) S(3) Applications • Switching applications |
|
|
|
|
Silan Microelectronics |
600V DP MOS POWER TRANSISTOR 11A,600V, RDS(on)(typ.)=0.3@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability ORDERING INFORMATION Part No. SVS11N60DD2TR SVS11N60FD2 SVS11 |
|
|
|
|
STMicroelectronics |
STP11NK50ZFP Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applications • Switching applications Descr |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
|
|
|
|
Silan Microelectronics |
TRANSISTOR 11A,650V, RDS(on)(typ.)=0.37Ω@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability 1 23 TO-220F-3L 1 23 TO-220-3L ORDERING INFORMATION Part N |
|
|
|
|
Silan Microelectronics |
TRANSISTOR 11A,650V, RDS(on)(typ.)=0.37Ω@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability 1 23 TO-220F-3L 1 23 TO-220-3L ORDERING INFORMATION Part N |
|
|
|
|
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Th |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum t |
|
|
|
|
STMicroelectronics |
N-Channel Power MOSFET TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB) • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • Hig |
|
|
|
|
STMicroelectronics |
Power MOSFET Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A 10 A 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast |
|
|
|
|
STMicroelectronics |
STW11NB80 er V DS V DGR VGS ID ID IDM ( •) Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic |
|
|
|
|
Silan Microelectronics |
650V SUPER JUNCTION MOS POWER TRANSISTOR 11A,650V, RDS(on)(typ.)=0.33@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability 12 3 TO-220F-3L 1 3 TO-252-2L ORDERING INFORMATION Part No |
|
Desde 2024. D4U Semiconductor.
|