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11N65M2 |
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| Part Number | 11N65M2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized ... |
| Features |
Order code
VDS
RDS(on) max.
ID
STD11N65M2
STP11N65M2
650 V
0.68 Ω
7A
STU11N65M2
• Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 85 W Package DPAK TO-220 IPAK Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. P... |
| Document |
 11N65M2 Data Sheet
PDF 757.35KB |
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