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11NB80 |
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| Part Number | 11NB80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
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V DS V DGR VGS
ID ID IDM ( •) Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area Value 800 800 ± 30 11 6.9 44 190 1.52 4 -65 to 150 150 I SD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns oC oC July 1999 1/8... |
| Document |
 11NB80 Data Sheet
PDF 106.01KB |
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Desde 2024. D4U Semiconductor.
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