Part Number | 11N50 |
Manufacturer | Unisonic Technologies |
Title | N-CHANNEL POWER MOSFET |
Description | The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switch... |
Features |
* Low Gate Charge: 43nC (TYP.) * 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * Low CRSS: 25pF (TYP.) * With 100% Avalanche Tested * Improved dv/dt Capability * Fast Recovery Body Diode: 90ns (TYP.)
SYMBOL
D
G S
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 11N50L- TF1... |
Datasheet | 11N50 pdf datasheet - 173.95KB |
Part Number | 11N50K-MT |
Manufacturer | Unisonic Technologies |
Title | N-CHANNEL POWER MOSFET |
Description | The UTC 11N50K-MT is a N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect s. |
Features |
* RDS(ON) < 0.55Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N50KL-TF2-T
11N50KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F. |
Datasheet | 11N50K-MT pdf datasheet |
Part Number | 11N50E |
Manufacturer | Philips |
Title | PowerMOS transistors |
Description | N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor po. |
Features |
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-eff. |
Datasheet | 11N50E pdf datasheet |
Part Number | 11N50-CB |
Manufacturer | UTC |
Title | N-CHANNEL MOSFET |
Description | The UTC 11N50-CB is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect s. |
Features |
* RDS(ON) < 0.55Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
11N50L-TF1-T
11N50G-TF1-T
TO-220F1
11N50L-TF2-T
11N50G-TF2-T
TO-220F2
11N50L-TF3. |
Datasheet | 11N50-CB pdf datasheet |
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