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B11NM60N |
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| Part Number | B11NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of... |
| Features |
Type
VDSS (@TJmax)
STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
650 V 650 V 650 V 650 V 650 V 650 V
RDS(on) max
0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω
ID
10 A 10 A 10 A 10 A 10 A(1) 10 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout t... |
| Document |
 B11NM60N Data Sheet
PDF 769.91KB |
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