ON Semiconductor BUV Hoja de datos

No.	parte #	Fabricante	Descripción
1	BUV20	ON Semiconductor	NPN Silicon Power Transistor
2	BUV19	Inchange Semiconductor	Silicon NPN Power Transistor ETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 30A; IB= 3A VCE(
3	BUV37	Mospec Semiconductor	POWER TRANSISTORS
4	BUV20	Inchange Semiconductor	Silicon NPN Power Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1☆ C
5	BUV48A	Inchange Semiconductor	Silicon NPN Power Transistor ebsite www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; I
6	BUV22	ON Semiconductor	SITCHMODE Series NPN Silicon Power Transistor http://onsemi.com • High DC Current Gain: • Low VCE(sat), VCE(sat) hFE min = 20 at IC = 10 A max = 1.0 V at IC = 10 A TF max = 0.35 ms at IC = 20 A 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • Very Fast Switching Times: •
7	BUV48A	ON Semiconductor	SITCHMODE II Series NPN Silicon Power Transistors
8	BUV37	Inchange Semiconductor	Silicon NPN Power Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BUV37 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; IB= 0; L= 15mH B 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7 A; IB=
9	BUV83	Inchange Semiconductor	Silicon NPN Power Transistor ：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUV82/83 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUV82 400 VCEO(SUS) Collector-E
10	BUV89	Inchange Semiconductor	Silicon NPN Power Transistor RACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 800 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VCE(sa
11	BUV23	Comset Semiconductors	POWER SWITCH APPLICATIONS lector Cutoff Current Collector Cutoff Current Test Condition(s) IC=200 mA, L= 25mH IC=0A , IE=50 mA VCE=260 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125°C Min Typ Mx Unit 325 7 3 3 12 1/2 Datasheet pdf - http://www.DataShee
12	BUV27	Comset Semiconductors	SILICON POWER TRANSISTORS UV27A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Value Symbol ICEX IEBO VCEOsust VEBO Ratings Collector Cutoff Current (*) Emitter Cutoff Current Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter s
13	BUV22	Inchange Semiconductor	Silicon NPN Power Transistor
14	BUV11	ON Semiconductor	SITCHMODE Series NPN Silicon Power Transistor ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ
15	BUV21	ON Semiconductor	NPN Silicon Power Transistor • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base
16	BUV48	ON Semiconductor	SITCHMODE II Series NPN Silicon Power Transistors
17	BUV60	ON Semiconductor	SWITCHMODE Series NPN Silicon Power Transistor ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS BUV20 160 160 150 BUV60 260 260 260 Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc Collector –Emititer Voltage Collector –Base Voltage
18	BUV26	ON Semiconductor	NPN Silicon Power Transistor • Switch-mode Power Supplies • High Frequency Converters • Relay Drivers • Driver • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO(su
19	BUV10	Inchange Semiconductor	Silicon NPN Power Transistor Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV10 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 125 V V(BR)EBO Emitter-Base Breakdown Voltag
20	BUV39	Inchange Semiconductor	Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV39 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;