BUV89 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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BUV89

Inchange Semiconductor
BUV89
BUV89 BUV89
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Part Number BUV89
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use...
Features RACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 800 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 4.5A; IB= 2A VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ VEB= 5V; IC=0 1.3 V 1 2 mA 10 mA hFE DC Current Gain IC= 1A; VCE= 5V 8 NOTICE: ISC reserves the rights ...

Document Datasheet BUV89 Data Sheet
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