BUV39 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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BUV39

Inchange Semiconductor
BUV39
BUV39 BUV39
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Part Number BUV39
Manufacturer Inchange Semiconductor
Description ·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 7.5A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃...
Features ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV39 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICER Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A 0.8 V Collector-Emitter Saturation Voltage IC= 15A ;IB= 1.5A IC= 20A ;IB= 2.5A 0.9 V Collector-Emitter Saturation Voltage 1.2 V Base-Emitter Saturation Voltage IC= 15A ;IB= 1.5A 1.7 V Base-Emitter Satur...

Document Datasheet BUV39 Data Sheet
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