Busque con el número de pieza junto con el fabricante o la descripción
BUV10 |
Click to view a larger image
| Part Number | BUV10 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB ... |
| Features |
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BUV10
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
125
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.0
V
Collector-Emitter Saturation Voltage
IC= 20A ;IB= 2A IC= 10A; IB= 1A
2.0
V
Base-Emitter Saturation Voltage
1.5
V
Collector Cutoff Current
VCE= 100V; IB= 0 VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=125℃ VEB= 5V; IC... |
| Document |
 BUV10 Data Sheet
PDF 111.10KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUV10N |
Seme LAB |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
|
| 2 | BUV11 |
Motorola Inc |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|
| 3 | BUV11 |
ON Semiconductor |
SITCHMODE Series NPN Silicon Power Transistor |
|
| 4 | BUV12 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | BUV12 |
INCHANGE |
NPN Transistor |
|
| 6 | BUV18 |
ST Microelectronics |
NPN High Current Switching Transistors |
|
Desde 2024. D4U Semiconductor.
|