Busque con el número de pieza junto con el fabricante o la descripción
BUV19 |
Click to view a larger image
| Part Number | BUV19 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 30A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ratings(T... |
| Features |
ETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 30A; IB= 3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 60A; IB= 6A
VBE(sat) Base-Emitter Saturation Voltage ICEX Collector Cutoff Current IEBO Emitter Cutoff Current
IC= 60A; IB= 6A
VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=100℃
VEB= 5V; IC= 0
0.6 V
1.2 V
2.0 V
1.0 3.0
mA
1.0 mA
fT Current-Gain—Bandwidth Product IC= 2A; VCE= 15V
8
MHz
Switc... |
| Document |
 BUV19 Data Sheet
PDF 188.09KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUV10 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BUV10N |
Seme LAB |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
|
| 3 | BUV11 |
Motorola Inc |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|
| 4 | BUV11 |
ON Semiconductor |
SITCHMODE Series NPN Silicon Power Transistor |
|
| 5 | BUV12 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | BUV12 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|