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ON Semiconductor |
MJD45H11 • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage • Fast Switching Speeds |
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MCC |
Silicon PNP epitaxial planer Transistors +LJK'&&XUUHQW*DLQ %XLOWLQD'DPSHU'LRGHDW(& +DORJHQ)UHH*UHHQ'HYLFH 1RWH 0RLVWXUH6HQVLWLYLW\/HYHO (SR[\0HHWV8/ 9)ODPPDELOLW\5DWLQJ /HDG)UHH)LQLVK5R+6&RPSOLDQW 36XIIL['HVLJQDWHV5R+6 &RPSOLDQW6HH2UG |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor .com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Susta |
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Inchange Semiconductor |
Silicon NPN Power Transistor 0 UNIT ℃/W ℃/W MJD50 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter |
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ON Semiconductor |
Complementary Darlington Power Transistor • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Curre |
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CDIL |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
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ST Microelectronics |
Complementary power Darlington transistors ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Da |
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Motorola |
SILICON POWER TRANSISTORS ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Î |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emit |
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Motorola |
SILICON POWER TRANSISTORS ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Î |
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TAITRON |
SMD Darlington Power Transistor • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ra |
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Motorola |
SILICON POWER TRANSISTORS ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |
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Fairchild |
NPN Epitaxial Silicon Transistor • High-Voltage and High-Reliability • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “ - I ” Suffix) • Electrically Similar to Popular TIP47 and TIP50 1 D-PAK 1 I-PAK 1.Base 2.Col |
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Inchange Semiconductor |
Silicon PNP Power Transistor or MJD5731 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A VBE(on) Base-E |
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ON Semiconductor |
Complementary Darlington Power Transistor • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular TIP31 and TIP32 Series • NJV Prefix for Automotive and Other Applications Requiring |
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ON Semiconductor |
Complementary Darlington Power Transistor • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Curre |
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Inchange Semiconductor |
Silicon PNP Power Transistor Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJD210 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustai |
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ST Microelectronics |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS IC ICM IB P tot Tstg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 ° C Storage Temperature Max. Oper |
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ST Microelectronics |
Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are manufactured using low v |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR A W o o C C January 2000 1/6 MJD50 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Sym |
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Desde 2024. D4U Semiconductor.
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