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MJD122 |
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| Part Number | MJD122 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·Complementary Pairs Simplifies Designs ·Minimum Lot-to-Lot variations for rob... |
| Features |
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD122
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(sus) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
ICEO
Collector Cutoff Current
VcE= 50V; IC= 0
ICBO
Collector Cutoff Current
VCB=100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1*
DC Current Gain
IC= 4A; VCE=4V
hFE-2*
DC Current Gain
IC= 8A; VCE= 4V
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
*VCE(sat)-2* Collector-Em... |
| Document |
 MJD122 Data Sheet
PDF 250.35KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD122 |
GME |
Epitaxial Planar NPN Transistor |
|
| 2 | MJD122 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 3 | MJD122 |
ST Microelectronics |
Complementary power Darlington transistors |
|
| 4 | MJD122 |
Fairchild |
NPN Silicon Darlington Transistor |
|
| 5 | MJD122 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 6 | MJD122 |
TAITRON |
SMD Darlington Power Transistor |
|
Desde 2024. D4U Semiconductor.
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