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MJD122 |
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| Part Number | MJD122 |
| Manufacturer | GME |
| Description | Epitaxial Planar NPN Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight Lead. Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value . |
| Features |
High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight Lead. Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC Tj ,Tstg Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base Current Collector Power Dissipation Junction and Storage temperature range 100 100 5 8 16 120 1.5 -65 to +150 V V V. |
| Datasheet |
 MJD122 Data Sheet
PDF 220.74KB |
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MJD122 |
| Part Number | MJD122 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·Complementary Pairs Simplifies Designs ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier . |
| Features | .com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 ICEO Collector Cutoff Current VcE= 50V; IC= 0 ICBO Collector Cutoff Current VCB=100V; IE= 0 IEBO Emitter Cutoff . |
MJD122 |
| Part Number | MJD122 |
| Manufacturer | ST Microelectronics |
| Title | Complementary power Darlington transistors |
| Description | The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1. Internal schematic diagrams Table 1. Device summary Or. |
| Features |
■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1.. |
MJD122 |
| Part Number | MJD122 |
| Manufacturer | Motorola |
| Title | SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD122/D Complementary Darlington Power Transistors DPAK For Surface Mount Applications • • • • Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (. |
| Features | ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ Î. |
MJD122 |
| Part Number | MJD122 |
| Manufacturer | TAITRON |
| Title | SMD Darlington Power Transistor |
| Description | MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO IC Emitter-Base Voltage Collector Current Continuous Collector Current Peak 5 8 16 IB Base Current 120 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 RthJC TJ, TSTG Thermal Resistance from Junction. |
| Features |
• Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO. |
MJD122 |
| Part Number | MJD122 |
| Manufacturer | ON Semiconductor |
| Title | Complementary Darlington Power Transistor |
| Description | MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replac. |
| Features |
• Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: ♦ Human Body Model, 3B > 8000 V ♦ Machine Model, C > 400 V . |
MJD122 |
| Part Number | MJD122 |
| Manufacturer | Fairchild |
| Title | NPN Silicon Darlington Transistor |
| Description | MJD122 — NPN Silicon Darlington Transistor March 2016 MJD122 NPN Silicon Darlington Transistor Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement. |
| Features |
• D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 1 D-PAK 1.Base 2.Collector 3.Emitter Equivalent Circuit C B R1 R1 8k R2 0.12k R2 E Ordering Information Part Number MJD122TF Top Mark MJD122 Package TO-252 3L (DPAK) Packing Method T. |
MJD122 |
| Part Number | MJD122 |
| Manufacturer | JCET |
| Title | NPN Transistor |
| Description | -,$1*68&+$1*-,$1*(/(&7521,&67(&+12/2*<&2/7' 72-3L 3ODVWLF(QFDSVXODWH7UDQVLVWRUV 0-' TRANSISTOR（NPN） )($785(6 ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 72/ 1.BASE 2.COLLECTOR 3.EMITTER 0$;,0805$7,1*6 (Ta=25℃unl. |
| Features | . |
MJD122 |
| Part Number | MJD122 |
| Manufacturer | MCC |
| Title | Silicon NPN epitaxial planer Transistors |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJD122 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plastic.. |
| Features |
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 • High DC Current Gain • Electrically similar to popular TIP 122 • Built-in a damper diode at E-C • Maximum Thermal Resistance: 83.3oC/W Junction to Ambient Maximum Ratings @ 25OC Unless Otherwise Specified . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD122-1 |
ST Microelectronics |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|
| 2 | MJD127 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 3 | MJD127 |
Fairchild |
PNP Transistor |
|
| 4 | MJD127 |
ST Microelectronics |
Complementary power Darlington transistors |
|
| 5 | MJD127 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 6 | MJD127 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 7 | MJD127 |
MCC |
Silicon PNP epitaxial planer Transistors |
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| 8 | MJD127 |
GME |
Epitaxial Planar PNP Transistor |
|
| 9 | MJD127 |
JCET |
PNP Transistor |
|
| 10 | MJD127-1 |
ST Microelectronics |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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