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MJD127 |
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| Part Number | MJD127 |
| Manufacturer | MCC |
| Description | 0-' Features +LJK'&&XUUHQW*DLQ %XLOWLQD'DPSHU'LRGHDW(& +DORJHQ)UHH*UHHQ'HYLFH 1RWH 0RLVWXUH6HQVLWLYLW/HYHO (SR[0HHWV8/ 9)ODPPDELOLW5DWLQJ /HDG)UHH)LQLVK5R+6&RPSOLDQW 36XIIL['HVLJQDWHV5R+6 &RPSOLDQW6HH2UGHULQJ,QIRUPDWLRQ Maximum Ratings @ 25°C Unless Otherwise Specified 2SHUDWLQJ-XQFWLRQ7HPSHU. |
| Features |
+LJK'&&XUUHQW *DLQ %XLOWLQD'DPSHU'LRGHDW(& +DORJHQ)UHH *UHHQ'HYLFH 1RWH 0RLVWXUH6HQVLWLYLW/HYHO (SR[0HHWV8/ 9)ODPPDELOLW5DWLQJ /HDG)UHH)LQLVK5R+6&RPSOLDQW 36XIIL['HVLJQDWHV5R+6 &RPSOLDQW6HH2UGHULQJ,QIRUPDWLRQ Maximum Ratings @ 25°C Unless Otherwise Specified 2SHUDWLQJ-XQFWLRQ7HPSHUDWXUH5DQJH ഒWRഒ 6WRUDJH7HPSHUDWXUH5DQJH ഒWRഒ 7KHUPDO5HVLVWDQFH ഒ:-XQFWLRQWR$PELHQW 7KHUPDO5HVLVWDQFH ഒ:-XQFWLRQWR&DVH Parameter &ROOHFWRU%DVH9ROWDJH &ROOHFWRU(PLWWHU9ROWDJH (PLWWHU%DVH9ROWDJH &RQWLQXRXV. |
| Datasheet |
 MJD127 Data Sheet
PDF 428.74KB |
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MJD127 |
| Part Number | MJD127 |
| Manufacturer | Fairchild |
| Title | PNP Transistor |
| Description | MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127 Complement to MJD122 1 D-PAK 1.Base 1 I-PAK 3.Em. |
| Features | ustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage *Base-Emitter ON Voltage Output Capacitance Test Condition IC = - 30mA, IB = 0 VCE = - 50V, IB = 0 VCB = - 100V, IE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 4A VCE = - 4V, VEB = -8A IC = - 4A, IB = - 16mA IC = - 8A, I. |
MJD127 |
| Part Number | MJD127 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Darlington Power Transistor |
| Description | ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. AB. |
| Features | ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(ON) Base-Emitter voltage ICEO Collector Cutoff Current IC=-4A; IB= -16mA IC=-8A; IB= -80mA IC=-8A; IB= -80mA IC= -4A; . |
MJD127 |
| Part Number | MJD127 |
| Manufacturer | Motorola |
| Title | SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD122/D Complementary Darlington Power Transistors DPAK For Surface Mount Applications • • • • Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (. |
| Features | ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ Î. |
MJD127 |
| Part Number | MJD127 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD127 TRANSISTOR (PNP) FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ T. |
| Features | High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -100 -100 -5 -8 1.5 150 -55-150 Uni. |
MJD127 |
| Part Number | MJD127 |
| Manufacturer | GME |
| Title | Epitaxial Planar PNP Transistor |
| Description | Epitaxial Planar PNP Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight Lead. Complement to MJD122. Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range ap. |
| Features |
High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight Lead. Complement to MJD122. Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100. |
MJD127 |
| Part Number | MJD127 |
| Manufacturer | ON Semiconductor |
| Title | Complementary Darlington Power Transistor |
| Description | MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replac. |
| Features |
• Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: ♦ Human Body Model, 3B > 8000 V ♦ Machine Model, C > 400 V . |
MJD127 |
| Part Number | MJD127 |
| Manufacturer | ST Microelectronics |
| Title | Complementary power Darlington transistors |
| Description | The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1. Internal schematic diagrams Table 1. Device summary Or. |
| Features |
■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1.. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD122 |
GME |
Epitaxial Planar NPN Transistor |
|
| 2 | MJD122 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 3 | MJD122 |
ST Microelectronics |
Complementary power Darlington transistors |
|
| 4 | MJD122 |
Fairchild |
NPN Silicon Darlington Transistor |
|
| 5 | MJD122 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 6 | MJD122 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 7 | MJD122 |
TAITRON |
SMD Darlington Power Transistor |
|
| 8 | MJD122 |
JCET |
NPN Transistor |
|
| 9 | MJD122 |
MCC |
Silicon NPN epitaxial planer Transistors |
|
| 10 | MJD122-1 |
ST Microelectronics |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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