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MJD127 |
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| Part Number | MJD127 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD127 TRANSISTOR (PNP) FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Da... |
| Features |
High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -100 -100
-5 -8 1.5 150 -55-150
Unit V V V A W
℃ ℃
TO-251-3L
1. BASE 2. COLLECTOR 3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)C... |
| Document |
 MJD127 Data Sheet
PDF 376.17KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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| 2 | MJD122 |
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| 3 | MJD122 |
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| 4 | MJD122 |
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| 7 | MJD122 |
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Desde 2024. D4U Semiconductor.
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