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MJD127 |
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| Part Number | MJD127 |
| Manufacturer | Fairchild |
| Description | MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “... |
| Features |
ustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage *Base-Emitter ON Voltage Output Capacitance Test Condition IC = - 30mA, IB = 0 VCE = - 50V, IB = 0 VCB = - 100V, IE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 4A VCE = - 4V, VEB = -8A IC = - 4A, IB = - 16mA IC = - 8A, IB = - 80mA IC = - 8A, IB = - 80mA VCE = -4V, IC = - 4A VCB = - 10V, IE = 0 f= 0.1MHz 1000 100 Min. - 100 Max. - 10 - 10 -2 12K -2 -4 - 4.5 - 2.8 300 V V V V pF Units V µA µA mA
* Pulse Test: PW≤300µs... |
| Document |
 MJD127 Data Sheet
PDF 51.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD122 |
GME |
Epitaxial Planar NPN Transistor |
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| 2 | MJD122 |
ON Semiconductor |
Complementary Darlington Power Transistor |
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| 3 | MJD122 |
ST Microelectronics |
Complementary power Darlington transistors |
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| 4 | MJD122 |
Fairchild |
NPN Silicon Darlington Transistor |
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| 5 | MJD122 |
Motorola |
SILICON POWER TRANSISTORS |
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| 6 | MJD122 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
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| 7 | MJD122 |
TAITRON |
SMD Darlington Power Transistor |
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| 8 | MJD122 |
JCET |
NPN Transistor |
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| 9 | MJD122 |
MCC |
Silicon NPN epitaxial planer Transistors |
|
| 10 | MJD122-1 |
ST Microelectronics |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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