Busque con el número de pieza junto con el fabricante o la descripción
MJD210 |
Click to view a larger image
| Part Number | MJD210 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD200 ·Minimum Lot-to-Lot variations for robust devic... |
| Features |
Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJD210
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
-25
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA
-0.3
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A ;IB= -0.2A
-0.75
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A ;IB= -1A
-1.8
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A ;IB= -1A
-2.5
V
VBE(on) B... |
| Document |
 MJD210 Data Sheet
PDF 206.59KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|