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MJD50 |
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| Part Number | MJD50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb... |
| Features |
A W
o o
C C
January 2000
1/6
MJD50
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 500 V V CE = 300 V V EB = 5 V I C = 30 mA 400 Min. Typ . Max. 0.1 0.1 1 Un it mA mA mA V
V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat )∗ V BE(on) ∗ hFE∗ fT hf e ... |
| Document |
 MJD50 Data Sheet
PDF 87.20KB |
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