MJD122-1 ST Microelectronics COMPLEMENTARY POWER DARLINGTON TRANSISTORS Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

MJD122-1

ST Microelectronics
MJD122-1
MJD122-1 MJD122-1
zoom Click to view a larger image
Part Number MJD122-1
Manufacturer STMicroelectronics (https://www.st.com/)
Description The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epi taxial Bas e technology for cost-eff ective performance. R1 Typ. = 10 KΩ R 2 Typ. = 150 Ω ABSOLUTE MAXIMUM R...
Features IC ICM IB P tot Tstg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 ° C Storage Temperature Max. Operating Junction Temperature Value MJD122 MJD127 100 100 5 5 8 0.1 20
  –65 to 150 150 V V V A A A W °C °C Unit For PNP types voltage and current values are negative. August 2002 1/8 MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4 THERMAL DATA Rthj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 °C/W °...

Document Datasheet MJD122-1 Data Sheet
PDF 91.57KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 MJD122
GME
Epitaxial Planar NPN Transistor Datasheet
2 MJD122
ON Semiconductor
Complementary Darlington Power Transistor Datasheet
3 MJD122
ST Microelectronics
Complementary power Darlington transistors Datasheet
4 MJD122
Fairchild
NPN Silicon Darlington Transistor Datasheet
5 MJD122
Motorola
SILICON POWER TRANSISTORS Datasheet
6 MJD122
Inchange Semiconductor
Silicon NPN Darlington Power Transistor Datasheet
More datasheet from ST Microelectronics
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad