National Semiconductor 2N3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N3685	National Semiconductor	N-Channel JFETs ion Drain Current Drain-Source ON Resistance VDS=20V,I D = 1 nA V DS =20V, V GS =0 V D s = 0V, Vqs = 0- (Note 1) Common-Source Forward Transconductance, (Note 3i Common-Source Output Conductance Common-Source Reverse Transfer Capacitance V DS =20V
2	2N3563	National Semiconductor	RF Amplifier and Oscillators
3	2N3686	National Semiconductor	N-Channel JFETs ion Drain Current Drain-Source ON Resistance VDS=20V,I D = 1 nA V DS =20V, V GS =0 V D s = 0V, Vqs = 0- (Note 1) Common-Source Forward Transconductance, (Note 3i Common-Source Output Conductance Common-Source Reverse Transfer Capacitance V DS =20V
4	2N3955	National Semiconductor	N-Channel Monolithic Dual JFETs e Breakdown VGS 30V, VDS "" o CONDITIONS vds-o, Ig" 1 MA V DS = 20V. D \| - 1 „A Gate-Source Voltage V D S" 20V. ID - 200 fjA V DS -20V. Vgs-0 Common Sourc e Forwjr.1 3ts 9 os C,^ s e Output Conductance Capacitance e Input V DS -20V, vGs o
5	2N3687	National Semiconductor	N-Channel JFETs ion Drain Current Drain-Source ON Resistance VDS=20V,I D = 1 nA V DS =20V, V GS =0 V D s = 0V, Vqs = 0- (Note 1) Common-Source Forward Transconductance, (Note 3i Common-Source Output Conductance Common-Source Reverse Transfer Capacitance V DS =20V
6	2N3956	National Semiconductor	N-Channel Monolithic Dual JFETs } V(3s PARAMETER Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage \q Gate Operating Current IqSS 1 Vfsi g os C iss C(-\|g NF i'G1- 'G2: l DSSl'lDSS2 ivqsi v GS2 : A.VqsI-
7	2N3954A	National Semiconductor	N-Channel Monolithic Dual JFETs e Breakdown VGS 30V, VDS "" o CONDITIONS vds-o, Ig" 1 MA V DS = 20V. D \| - 1 „A Gate-Source Voltage V D S" 20V. ID - 200 fjA V DS -20V. Vgs-0 Common Sourc e Forwjr.1 3ts 9 os C,^ s e Output Conductance Capacitance e Input V DS -20V, vGs o
8	2N3957	National Semiconductor	N-Channel Monolithic Dual JFETs } V(3s PARAMETER Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage \q Gate Operating Current IqSS 1 Vfsi g os C iss C(-\|g NF i'G1- 'G2: l DSSl'lDSS2 ivqsi v GS2 : A.VqsI-
9	2N3958	National Semiconductor	N-Channel Monolithic Dual JFETs } V(3s PARAMETER Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage \q Gate Operating Current IqSS 1 Vfsi g os C iss C(-\|g NF i'G1- 'G2: l DSSl'lDSS2 ivqsi v GS2 : A.VqsI-
10	2N3954	National Semiconductor	N-Channel Monolithic Dual JFETs e Breakdown VGS 30V, VDS "" o CONDITIONS vds-o, Ig" 1 MA V DS = 20V. D \| - 1 „A Gate-Source Voltage V D S" 20V. ID - 200 fjA V DS -20V. Vgs-0 Common Sourc e Forwjr.1 3ts 9 os C,^ s e Output Conductance Capacitance e Input V DS -20V, vGs o
11	2N3684	National Semiconductor	N-Channel JFETs ion Drain Current Drain-Source ON Resistance VDS=20V,I D = 1 nA V DS =20V, V GS =0 V D s = 0V, Vqs = 0- (Note 1) Common-Source Forward Transconductance, (Note 3i Common-Source Output Conductance Common-Source Reverse Transfer Capacitance V DS =20V
12	2N3955A	National Semiconductor	N-Channel Monolithic Dual JFETs e Breakdown VGS 30V, VDS "" o CONDITIONS vds-o, Ig" 1 MA V DS = 20V. D \| - 1 „A Gate-Source Voltage V D S" 20V. ID - 200 fjA V DS -20V. Vgs-0 Common Sourc e Forwjr.1 3ts 9 os C,^ s e Output Conductance Capacitance e Input V DS -20V, vGs o
13	2N3644	National Semiconductor	PNP Transistor