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2N3954 |
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| Part Number | 2N3954 |
| Manufacturer | Siliconix |
| Description | monolithic dual n-channel JFETs designed for • • • • Low and Medium Frequency Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Any Case-To-Lead Voltage...•.....•• " .•...•.. ±100 V Gate-Drain or Gate-Source Voltage •••••..•...••.• -50 V Gate Current. . . • . • . • . . • • . • • • • • • • • • . • . . . . . .• 50 mA Tot. |
| Features |
0, '1
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) CharacterIStic 1 12-' IGSS 3 BVGSS 1- 4 I- 5 IS s T A T I VGS(olll VGS(II 17" C VGS IS l"i IG 1- 10 lOSS 1-+1- gls IE. 13 0 y gas 1- N 14 A CISS I-M 15 I Crss -c -16 Cdgo 17 NF Gate Reverse Current Gate ·Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage Gate Operating Current Saturation Dram Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Drain-Gate Ca. |
| Datasheet |
 2N3954 Data Sheet
PDF 81.02KB |
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2N3954 |
| Part Number | 2N3954 |
| Manufacturer | Micross |
| Title | MONOLITHIC DUAL N-CHANNEL JFET |
| Description | 2N3954 MONOLITHIC DUAL N-CHANNEL JFET The 2N3954 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3954 family are matched JFET pairs for differential amplifiers. The 2N3954 family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring. |
| Features |
LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP. en = 10nV/√Hz TYP.
2N3954 Applications:
Wideband Differential Amps High Input Impedance Amplifiers
Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note. |
2N3954 |
| Part Number | 2N3954 |
| Manufacturer | National Semiconductor |
| Title | N-Channel Monolithic Dual JFETs |
| Description | The 2N3954 thru 2N3955/A series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifier applications requiring low noise, high common-mode rejection, and very tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage —50V Gate-to-Gate. |
| Features | Breakdown VGS 30V, VDS "" o CONDITIONS vds-o, Ig" 1 MA V DS = 20V. D | - 1 „A Gate-Source Voltage V D S" 20V. ID - 200 fjA V DS -20V. Vgs-0 Common Sourc e Forwjr.1 3ts 9 os C,^ s e Output Conductance Capacitance e Input V DS -20V, vGs o Hanger Capaalanw Co-nmon Sourc Noise Fniuri! Deferential Gats; V DG " 10V. S I = V D s- 20V. V G S 0, G K - 10Mt> V DS = 20V, D l = 200; ; A . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3950 |
Motorola |
NPN silicon RF power transistor |
|
| 2 | 2N3954A |
National Semiconductor |
N-Channel Monolithic Dual JFETs |
|
| 3 | 2N3954A |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET |
|
| 4 | 2N3954A |
Siliconix |
monolithic dual n-channel JFET |
|
| 5 | 2N3955 |
ETC |
N-Channel Dual Silicon Junction Field-Effect Transistor |
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| 6 | 2N3955 |
National Semiconductor |
N-Channel Monolithic Dual JFETs |
|
| 7 | 2N3955 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET |
|
| 8 | 2N3955 |
Siliconix |
monolithic dual n-channel JFET |
|
| 9 | 2N3955A |
National Semiconductor |
N-Channel Monolithic Dual JFETs |
|
| 10 | 2N3955A |
Siliconix |
monolithic dual n-channel JFET |
|
Desde 2024. D4U Semiconductor.
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