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2N3955 MONOLITHIC DUAL N-CHANNEL JFET

2N3955

2N3955
2N3955 2N3955
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Part Number 2N3955
Manufacturer Micross
Description 2N3955 MONOLITHIC DUAL N-CHANNEL JFET The 2N3955 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3955 family are matched JFET pairs for differential amplifiers. The 2N3955 family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The 2N3955.
Features LOW DRIFT  LOW LEAKAGE  LOW NOISE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP.  en = 10nV/√Hz TYP.  2N3955 Applications: ƒ ƒ Wideband Differential Amps High Input Impedance Amplifiers Maximum Temperatures  Storage Temperature  ‐65°C to +200°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor 
  – Note 1  ‐VGSS  Gate Voltage to Drain or Source  60V  ‐VDSO  Drain to Source Voltage  60V  ‐IG(f)  Gate Forward Current  50mA  Maximum Power Dissipation  Device Dissipation @ Free Air 
  – Total              .
Datasheet Datasheet 2N3955 Data Sheet
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2N3955

ETC
2N3955
Part Number 2N3955
Manufacturer ETC
Title N-Channel Dual Silicon Junction Field-Effect Transistor
Description 01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Diss.
Features rce Voltage with Temperature Transconductance Ratio g fs gos Ciss Cdgo Crss NF | IG1
  – IG2 | V(BR)GSS IGSS IG VGS VGS(OFF) VGS(F) IDSS 2N3954 Min
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  – 4.5 2 5 Max 2N3955 Min
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  – 4.2
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  – 4.5 2 5 Max 2N3956 Min
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  – 4.5 2 5 Max Unit V pA nA pA nA V V V V mA Proces.


2N3955

Siliconix
2N3955
Part Number 2N3955
Manufacturer Siliconix
Title monolithic dual n-channel JFET
Description monolithic dual n-channel JFETs designed for • • • • Low and Medium Frequency Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Any Case-To-Lead Voltage...•.....•• " .•...•.. ±100 V Gate-Drain or Gate-Source Voltage •••••..•...••.• -50 V Gate Current. . . • . .
Features 0, '1 *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) CharacterIStic 1 12-' IGSS 3 BVGSS 1- 4 I- 5 IS s T A T I VGS(olll VGS(II 17" C VGS IS l"i IG 1- 10 lOSS 1-+1- gls IE. 13 0 y gas 1- N 14 A CISS I-M 15 I Crss -c -16 Cdgo 17 NF Gate Reverse Current Gate
·Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage Gate Op.


2N3955

National Semiconductor
2N3955
Part Number 2N3955
Manufacturer National Semiconductor
Title N-Channel Monolithic Dual JFETs
Description The 2N3954 thru 2N3955/A series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifier applications requiring low noise, high common-mode rejection, and very tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage —50V Gate-to-Gate.
Features Breakdown VGS 30V, VDS "" o CONDITIONS vds-o, Ig" 1 MA V DS = 20V. D | - 1 „A Gate-Source Voltage V D S" 20V. ID - 200 fjA V DS -20V. Vgs-0 Common Sourc e Forwjr.1 3ts 9 os C,^ s e Output Conductance Capacitance e Input V DS -20V, vGs o Hanger Capaalanw Co-nmon Sourc Noise Fniuri! Deferential Gats; V DG " 10V. S I = V D s- 20V. V G S 0, G K - 10Mt> V DS = 20V, D l = 200; ; A .


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